Aluminum Nitride Powder – 501

White to gray hexagonal crystals

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Specifications

Formula AlN40.99
Composition Al- 65.8 , N- 34.2
Purity 99.9 %
Particle Size 7 – 10 Micron
CAS 24304-00-5
Melting Point 2200 °C
Density 3.26 G/Cm3
Mohs Hardness @ 20ºC 9-10
Crystal Structure Hexagonal
Applications Epoxy
Nuclear
Semiconductors
MSDS Aluminum-Nitride-Powder-501-502-503-504-MSDS(PDF)
Aluminum-Nitride-Powder-501-502-503-504-MSDS(DOC)
Typical Analysis Aluminum-Nitride-Powder-501-Typical-Analysis
Form Powder

Cost Per Kilogram

1-2 KG
3-10 KG
11-25 KG
26+ KG
Background Aluminum nitride was first synthesized in 1877. In the 1980's, it was recognized for its potential for use in microelectronics, because of its high level of thermal conductivity. In air, surface oxidation occurs above 700ºC. Above 1370ºC, bulk oxidation occurs. Aluminum nitride dissolves slowly in mineral acids and strong alkalis. It hydrolyzes slowly in water. Aluminum nitride is resistant to most molten salts.
Light Emitting Diodes There is current research into development of light emitting diodes for operation in ultraviolet.
Surface Acoustic Wave Sensors Epitaxially grown crystalline aluminum nitride is used for surface acoustic wave sensors used on silicon wafers. Aluminum nitride is used for its piezoelectric properties. After more than a decade, a mobile phone called the FBAR was developed with a RF filter.